PART |
Description |
Maker |
RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... 2.4-2.5 GHz Power Amplifier From old datasheet system 2.4?2.5 GHz Power Amplifier Single-band power amplifiers 2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
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ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc] ANADIGICS Inc ANADIGICS, Inc.
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AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET HEXFET庐 Power MOSFET HEXFET? Power MOSFET 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Ultra Low On-Resistance
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International Rectifier List of Unclassifed Man...
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TDA16846 TDA16847 TDA1684603 TDA16846-2 TDA16847-2 |
Controller for Switch Mode Power Supplies Supporting Low Power Standby and Power Factor
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Infineon Technologies AG
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TA8260AH |
Max Power 40 W BTL 4CH Audio Power IC Max Power 40 W BTL 】 4CH Audio Power IC Max Power 40 W BTL x 4CH Audio Power IC RAC15-TA(-E)(-ST) Series - Powerline Regulated AC-DC Converters; Output Voltage (Vdc): 5V; Auxilary Voltage (Vdc): 12V; Features: Compact AC-DC Power
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Toshiba Semiconductor Toshiba Corporation
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2SC5505 |
Power Device - Power Transistors - General-Purpose power amplification Silicon NPN epitaxial planar type
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Panasonic Semiconductor
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MAX5941A06 MAX5941A MAX5941B MAX5941ACSE-T |
IEEE 802.3af-Compliant Power-Over-Ethernet Interface/PWM Controller for Power Devices 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16
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Maxim Integrated Products, Inc.
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IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Bourns, Inc. Vishay Intertechnology, Inc.
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U5T12.12.5 R5T12.2.5 U28S15.45 U28S24.4 R28D15.22 |
Low power quad operational amplifiers High power 3-phase auxiliary power supply evaluation board based on L5991 and ESBT STC08DE150HV Evaluation board using 1x SD3932 for HF transmitters VIPer12A travel adaptor 3.6W output Analog IC 模拟IC RF power amplifier using 1 x PD55008 N-channel enhancement-mode lateral MOSFETs 模拟IC RF power amplifier using 1 x PD55008L 模拟IC
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Electronic Theatre Controls, Inc. KEMET Corporation Bourns, Inc. MITSUMI ELECTRIC CO., LTD.
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2SD1745 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SA2067 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1444A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
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